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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX12 DESCRIPTION *Low Collector Saturation Voltage*High Switching Speed *High Current Current Capability APPLICATIONS *Power switching circuits *Motor control Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEX VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 300 300 250 7 20 25 4 150 200 -65~200 UNIT V V V V A A A W PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEO ICEX IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 0.1A; IB= 0 IC= 5A; IB= 0.5A B BUX12 MIN 250 TYP. MAX UNIT V 1.0 1.5 1.5 1.5 1.5 6.0 1.0 20 10 8 60 V V V mA mA mA IC= 10A ;IB= 1.25A IC= 10A ;IB= 1.25A VCE= 200V; IB= 0 VCE= 300V;VBE= -1.5V VCE= 300V;VBE= -1.5V;TC=125 VEB= 5V; IC= 0 IC= 5A ; VCE= 4V IC= 10A ; VCE= 4V IC= 1A; VCE= 15V, ftest= 10MHz MHz Switching Times ton ts tf Turn-on Time Storage Time IC= 10A ;IB1= -IB2= 1.25A; VCC= 150V Fall Time 0.5 IC= 10A ;IB1= 1.25A; VCC= 150V 1.0 2.0 s s s isc Websitewww.iscsemi.cn |
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